In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 53, No. 9 ( 2014-09-01), p. 091102-
Abstract:
In this study, we analyzed the crystallinity of c -axis aligned crystalline In–Ga–Zn oxide (CAAC-IGZO) and single crystalline (sc) IGZO films. CAAC-IGZO films were formed on (111)-oriented yttria-stabilized-zirconia substrates by magnetron sputtering using a target. Sc-IGZO films were obtained by annealing CAAC-IGZO films at 1200 °C. The proportion of Zn in the composition changed during growth of the films, and as a result, sc-InGaO 3 (ZnO) 3 films were obtained. By using CAAC-IGZO films as the starting material, sc-IGZO films were formed even without a ZnO layer. This is presumably because the CAAC-IGZO film originally exhibits c -axis orientation. In addition, the characteristics of transistors fabricated using sc-IGZO and CAAC-IGZO films were compared, and no significant difference in current drivability, i.e., field-effect mobility, was observed between the different transistors. In this sense, CAAC-IGZO films that require no high temperature annealing are favorable for industrialization.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.53.091102
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2014
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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