In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 36, No. 12S ( 1997-12-01), p. 7488-
Abstract:
We demonstrate applications of alternating phase shift mask (Alt-PSM) techniques to ArF excimer laser lithography with a numerical aperture of 0.6 and a coherence factor of 0.3. A 0.10 µm line- & -space (L/S) pattern was fabricated using a single-layer resist and a 0.09 µm L/S pattern was fabricated using a silylation resist. However, the process window was smaller for the silylation resist than for the single-layer resist over the 0.10–0.13 µm L/S range. The maximum depth of focus (DOF) values were approximately 0.3, 0.5, and 0.9 µm for 0.10, 0.11, and 0.13 µm L/S patterns, respectively, for the single-layer resist. From exposure dose-DOF-tree analysis, we estimated the inclusive process margin including the critical dimension difference, the DOF, the dose margin, and the phase error. Assuming that the usable DOF is larger than 0.5 and 0.6 µm for 0.11 and 0.13 µm L/S patterns, respectively, the inclusive process margin for the single-layer resist is poor in comparison with future predictions.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.36.7488
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1997
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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