In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 3S ( 1993-03-01), p. 1419-
Abstract:
We used scanning force microscopy to evaluate the surface roughness of thermally oxidized Si(111). The initial surface, before oxidation, consisted of atomically flat terraces containing monoatomic steps and stepbands. The morphology of 10-nm-thick oxide surfaces formed at 800 to 1200°C was roughly similar to that of the initial surface. It is also revealed that a monoatomic step was retained on a 100-nm-thick oxide layer formed at 1100°C. The surface roughness tended to decrease as the oxidation temperature increased.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.1419
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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