In:
Israel Journal of Chemistry, Wiley, Vol. 55, No. 10 ( 2015-10), p. 1098-1102
Abstract:
A promising modified SILAR sequence approach has been employed for the synthesis of photoelectrochemically active Cu 2 ZnSnS 4 (CZTS) thin films. To study the influence of sulfurization temperatures on the CZTS thin films, the CZTS precursor thin films were annealed at temperatures of 520, 540, 560, and 580 °C for 1 h in an H 2 S (5 %)+Ar (95 %) atmosphere. These films were characterized for their structural, morphological, and optical properties using X‐ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, and UV‐vis spectrophotometer techniques. The film sulfurized at an optimized temperature of 580 °C shows the formation of a prominent CZTS phase with a dense microstructure and optical band gap energy of 1.38 eV. The photoelectrochemical (PEC) device fabricated using optimized CZTS thin films sulfurized at 580 °C exhibits an open circuit voltage ( V oc ) of 0.38 V and a short circuit current density ( J sc ) of 6.49 mA cm −2 , with a power conversion efficiency (η) of 0.96 %.
Type of Medium:
Online Resource
ISSN:
0021-2148
,
1869-5868
DOI:
10.1002/ijch.201400203
Language:
English
Publisher:
Wiley
Publication Date:
2015
detail.hit.zdb_id:
2066481-3
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