In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 12S ( 1999-12-01), p. 7084-
Abstract:
The defect inspectability and printability of X-ray masks have
been studied. To clarify the issues concerning the present inspection system, we made an X-ray mask programmed with various
defects, such as clear and opaque defects, dimension error and positional shift, for typical patterns such as line-and-space
(L & S), hole and 2-dimensional patterns. Both the mask pattern and
printed pattern on the wafer were specially inspected using the electron-beam inspection system SEM-Spec701 for the case of L & S
patterns. In order to estimate the sensitivity required of the next-generation inspection system, we investigated the critical
dimension (CD) errors due to mask defects, by comparing the printed patterns of the programmed-defect mask and the dose image profile
calculated with the lithographic simulator Toolset, developed at Wisconsin University. Based on these results, we discussed the
critical mask defect sizes that result in 10 nm CD error, and found that defects larger than 40 nm would significantly affect 100 nm
L & S patterns.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.7084
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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