In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 5R ( 2000-05-01), p. 2541-
Abstract:
Optical measurements are performed for CdSe n /ZnSe n strained layer superlattices with n =2 to 10 ML grown on InP substrates to investigate the structural property. The electron-heavy-hole transition is observed from all strained layer superlattices and the electron-light-hole transition is observed from strained layer superlattices with n larger than 6 ML by photoreflectance spectroscopy. The comparison of transition energy measured by photoreflectance and calculation results based on the transfer matrix reveals that the critical thickness for strain relaxation of the CdSe/ZnSe strained layer superlattice on InP is 8 to 10 ML. The photoluminescence peak energy exhibits blue shift with increasing temperature in the region of 12 to 40 K for n =4, 6, and 8 ML, while reflectance spectra reveal a monotonic red shift. The blue shift in the low-temperature region indicates the carrier localization originating due to interface fluctuation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2541
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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