In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 1S ( 1993-01-01), p. 384-
Abstract:
Electronic structures have been calculated for Si-based manmade crystals with homogeneous strain using a tight-binding sp 3 s * model. Interesting properties, such as direct transition and pseudonarrow bandgap, appear especially in crystals where two monolayers of non-Si atoms are stacked in many layers of Si atoms along the (111) orientation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
2006801-3
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