In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 7R ( 2011-07-01), p. 070103-
Abstract:
Epitaxial graphene can be formed on silicon substrates by annealing a 3C-SiC film formed on a silicon substrate in ultrahigh vacuum (G/3C-SiC/Si). In this work, we explore the graphitization process on the 3C-SiC(111)/Si(111) surface by using low-energy electron diffraction and X-ray photoelectron spectroscopy (XPS) and compare them with that on 6H-SiC(0001). Upon annealing at T ≥1150 °C, the 3C-SiC(111)/Si(111) surface follows the sequence of (√3×√3)R30°, (6√3×6√3)R30°, and (1×1) graphene in the surface structures. The C 1s core level according to XPS indicates that a buffer layer , identical with that in G/6H-SiC(0001), exists at the G/3C-SiC(111) buffer. These observations strongly suggest that graphitization on the surface of the 3C-SiC(111) face proceeds in a similar manner to that on the Si-terminated hexagonal bulk SiC crystals.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.070103
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink