In:
Applied Physics Letters, AIP Publishing, Vol. 97, No. 6 ( 2010-08-09)
Abstract:
This study describes the feasibility of fabricating of a single layer of fullerene embedded Si surface through a controlled self-assembly mechanism in an ultrahigh vacuum (UHV) chamber. The characteristics of the fullerene embedded Si surface are investigated directly using UHV-scanning probe microscopy. Additionally, the band gap energy and field emission parameters, including turn-on field and the field enhancement factor β of the fullerene embedded Si substrate, are determined using a high-voltage source measurement unit and UHV-scanning tunneling microscopy, respectively. Moreover, the nanomechanical properties, which represent the stress of the fullerene embedded Si substrates, are assessed by an environment atomic force microscope (AFM) and UHV-AFM, respectively. Results of this study demonstrate that a single layer of the fullerene embedded surface has superior properties for nanotechnology applications owing to the ability to control the self-assembly mechanism of fabrication.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2010
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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