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  • 1
    Online Resource
    Online Resource
    Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium
    Springer Science and Business Media LLC ; 1999
    In:  Journal of Electronic Materials Vol. 28, No. 7 ( 1999-07), p. 916-925
    Details
    In: Journal of Electronic Materials, Springer Science and Business Media LLC, Vol. 28, No. 7 ( 1999-07), p. 916-925
    Type of Medium: Online Resource
    ISSN: 0361-5235 , 1543-186X
    URL: Article
    DOI: 10.1007/s11664-999-0220-x
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1999
    detail.hit.zdb_id: 2032868-0
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  • 2
    Online Resource
    Online Resource
    Attosecond nanoscale near-field sampling
    Springer Science and Business Media LLC ; 2016
    In:  Nature Communications Vol. 7, No. 1 ( 2016-05-31)
    Details
    In: Nature Communications, Springer Science and Business Media LLC, Vol. 7, No. 1 ( 2016-05-31)
    Abstract: The promise of ultrafast light-field-driven electronic nanocircuits has stimulated the development of the new research field of attosecond nanophysics. An essential prerequisite for advancing this new area is the ability to characterize optical near fields from light interaction with nanostructures, with sub-cycle resolution. Here we experimentally demonstrate attosecond near-field retrieval for a tapered gold nanowire. By comparison of the results to those obtained from noble gas experiments and trajectory simulations, the spectral response of the nanotaper near field arising from laser excitation can be extracted.
    Type of Medium: Online Resource
    ISSN: 2041-1723
    URL: Article
    DOI: 10.1038/ncomms11717
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2016
    detail.hit.zdb_id: 2553671-0
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  • 3
    Online Resource
    Online Resource
    Microstructural defects in metalorganic vapor phase epitaxy of relaxed, graded InGaP: Branch defect origins and engineering
    American Vacuum Society ; 2004
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 22, No. 4 ( 2004-07-01), p. 1899-1911
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 22, No. 4 ( 2004-07-01), p. 1899-1911
    Abstract: Strain-relaxed, compositionally graded InGaP layers grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE) have previously been found to exhibit unusual contrast in transmission electron microscopy (TEM). The features that generate this contrast were termed “branch defects.” Branch defects have been shown to pin threading dislocations and are thus undesirable features for the realization of low dislocation density semiconductors. In this study, we compare the properties of branch defects formed during optimized, relaxed, graded InGaP buffer deposition in two different reactor configurations: a commercial, multiwafer, low-pressure reactor and a custom-built, atmospheric-pressure research reactor. Branch defect formation is further characterized via the introduction of in situ annealing interruptions during graded buffer deposition in the atmospheric-pressure system. Branch defects are observed in material from both reactor systems, suggesting that they are a phenomenon intrinsic to InGaP graded buffer growth. Careful TEM studies of the resulting samples reveal that the phase space for the formation of branch defects is similar in both reactor configurations. During standard optimized graded buffer growth, higher growth temperatures delay the onset of branch defect formation to higher indium fractions in the graded buffer. Low growth temperatures produce branch defects at lower indium fractions, and these defects tend to be more closely spaced. In addition, the formation of branch defects is favored by low V/III ratios and in situ growth interruption and annealing. Annealing is found to create anisotropic strain relaxation in the graded buffer, which we attribute to the blocking of gliding threading dislocations by preferentially oriented branch defects. Based on the observed properties of branch defects and the factors that affect their formation, it appears that these defects are a manifestation of local variations in indium concentration that develop on the sample surface during MOVPE and are buried in the bulk due to kinetic limitations.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.1775003
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2004
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
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  • 4
    Online Resource
    Online Resource
    High-power AlGaInN flip-chip light-emitting diodes
    AIP Publishing ; 2001
    In:  Applied Physics Letters Vol. 78, No. 22 ( 2001-05-28), p. 3379-3381
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 78, No. 22 ( 2001-05-28), p. 3379-3381
    Abstract: Data are presented on high-power AlGaInN flip-chip light-emitting diodes (FCLEDs). The FCLED is “flipped-over” or inverted compared to conventional AlGaInN light-emitting diodes (LEDs), and light is extracted through the transparent sapphire substrate. This avoids light absorption from the semitransparent metal contact in conventional epitaxial-up designs. The power FCLED has a large emitting area (∼0.70 mm2) and an optimized contacting scheme allowing high current (200–1000 mA, J∼30–143 A/cm2) operation with low forward voltages (∼2.8 V at 200 mA), and therefore higher power conversion (“wall-plug”) efficiencies. The improved extraction efficiency of the FCLED provides 1.6 times more light compared to top-emitting power LEDs and ten times more light than conventional small-area (∼0.07 mm2) LEDs. FCLEDs in the blue wavelength regime (∼435 nm peak) exhibit ∼21% external quantum efficiency and ∼20% wall-plug efficiency at 200 mA and with record light output powers of 400 mW at 1.0 A.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1374499
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2001
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 5
    Online Resource
    Online Resource
    New statistics for estimating the bulk rheology of active lava flows: Puu Oo examples
    American Geophysical Union (AGU) ; 1998
    In:  Journal of Geophysical Research: Solid Earth Vol. 103, No. B3 ( 1998-03-10), p. 5133-5142
    Details
    In: Journal of Geophysical Research: Solid Earth, American Geophysical Union (AGU), Vol. 103, No. B3 ( 1998-03-10), p. 5133-5142
    Abstract: Downstream changes in lava rheology due to cooling, crystallization, and vesiculation have a strong influence on the final length and morphology of a lava flow. Three statistics are proposed to estimate the change in lava rheology with distance along the path of an active flow. These statistics correspond to three separate models of the volumetric flow rate dependence on the thickness of the flow. Each statistic is based on flow dimensions and topographic data that are often available from field measurements or remote sensing. One model assumes an elementary laminar Newtonian flow. A second empirical model often used to describe the flow of complex geologic materials, such as lahars, sediment‐laden floods, and debris flows, is also investigated for comparison. A new volume‐loss model is also proposed to account for stationary components such as levees and stagnant areas. The three statistics derived from these flow rate models are applied and interpreted for two well‐defined lobes from episodes 2 and 18 of the 1983–1984 Puu Oo eruption. The power law dependence of the first two models results only in modest differences in the estimates of rheologic change along the flow path. However, the removal of lava from the active flow to construct stationary components produces significant differences in both the magnitude of computed rheologic changes and the ability to discern trends in rheologic changes along the path of the flow.
    Type of Medium: Online Resource
    ISSN: 0148-0227
    URL: Article
    DOI: 10.1029/97JB03743
    Language: English
    Publisher: American Geophysical Union (AGU)
    Publication Date: 1998
    detail.hit.zdb_id: 2033040-6
    detail.hit.zdb_id: 3094104-0
    detail.hit.zdb_id: 2130824-X
    detail.hit.zdb_id: 2016813-5
    detail.hit.zdb_id: 2016810-X
    detail.hit.zdb_id: 2403298-0
    detail.hit.zdb_id: 2016800-7
    detail.hit.zdb_id: 161666-3
    detail.hit.zdb_id: 161667-5
    detail.hit.zdb_id: 2969341-X
    detail.hit.zdb_id: 161665-1
    detail.hit.zdb_id: 3094268-8
    detail.hit.zdb_id: 710256-2
    detail.hit.zdb_id: 2016804-4
    detail.hit.zdb_id: 3094181-7
    detail.hit.zdb_id: 3094219-6
    detail.hit.zdb_id: 3094167-2
    detail.hit.zdb_id: 2220777-6
    detail.hit.zdb_id: 3094197-0
    SSG: 16,13
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  • 6
    Online Resource
    Online Resource
    Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
    AIP Publishing ; 2003
    In:  Applied Physics Letters Vol. 82, No. 14 ( 2003-04-07), p. 2221-2223
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 82, No. 14 ( 2003-04-07), p. 2221-2223
    Abstract: Optical cavity effects have a significant influence on the extraction efficiency of InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes (FCLEDs). Light emitted from the quantum well (QW) self-interferes due to reflection from a closely placed reflective metallic mirror. The interference patterns couple into the escape cone for light extraction from the FCLED. This effect causes significant changes in the extraction efficiency as the distance between the QW and the metallic mirror varies. In addition, the radiative lifetime of the QW also changes as a function of the distance between the QW and the mirror surface. Experimental results from packaged FCLEDs, supported by optical modeling, show that a QW placed at an optimum distance from the mirror provides a ∼2.3× increase in total light output as compared to a QW placed at a neighboring position corresponding to a minimum in overall light extraction.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.1566098
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2003
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 7
    Online Resource
    Online Resource
    The spectral development of Nova Cygni 1975
    American Astronomical Society ; 1977
    In:  The Astrophysical Journal Vol. 216 ( 1977-08), p. 23-
    Details
    In: The Astrophysical Journal, American Astronomical Society, Vol. 216 ( 1977-08), p. 23-
    Type of Medium: Online Resource
    ISSN: 0004-637X , 1538-4357
    URL: Article
    DOI: 10.1086/155438
    RVK:
    UA 1000
    Language: English
    Publisher: American Astronomical Society
    Publication Date: 1977
    detail.hit.zdb_id: 2207648-7
    detail.hit.zdb_id: 1473835-1
    SSG: 16,12
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  • 8
    Online Resource
    Online Resource
    Effect of post-growth cooling ambient on acceptor passivation in carbon-doped GaAs grown by metalorganic chemical vapor deposition
    AIP Publishing ; 1993
    In:  Applied Physics Letters Vol. 62, No. 11 ( 1993-03-15), p. 1248-1250
    Details
    In: Applied Physics Letters, AIP Publishing, Vol. 62, No. 11 ( 1993-03-15), p. 1248-1250
    Abstract: The degree of unintentional hydrogen passivation of acceptors in heavily C-doped GaAs (p≳1018 cm−3) grown by metalorganic chemical vapor deposition has been found to be a strong function of post-growth cool-down ambient. The carbon concentration in the GaAs and the amount of AsH3 in the cool-down ambient are the most important factors affecting passivation. Carbon acceptors can be reactivated by annealing in N2, then repassivated by heating and re-cooling in an AsH3/H2 or PH3/H2 ambient. Secondary ion mass spectrometry analysis shows that the hydrogen concentration is significantly higher in a C-doped GaAs surface layer which is exposed to the cool-down ambient than in a layer which is buried beneath n-type GaAs. This result is consistent with observations in n-p-n heterojunction bipolar transistor structures, where the fraction of C acceptors passivated in the base region is found to be less than in a single layer grown under identical conditions. Be-doped GaAs grown by gas-source molecular beam epitaxy has also been heated and cooled in AsH3-containing ambients, but no acceptor passivation is detectable by Hall effect measurements.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    URL: Article
    DOI: 10.1063/1.108748
    RVK:
    UA 1000
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 9
    Online Resource
    Online Resource
    Zero-field time-of-flight characterization of minority-carrier transport in heavily carbon-doped GaAs
    AIP Publishing ; 1993
    In:  Journal of Applied Physics Vol. 73, No. 11 ( 1993-06-01), p. 7471-7477
    Details
    In: Journal of Applied Physics, AIP Publishing, Vol. 73, No. 11 ( 1993-06-01), p. 7471-7477
    Abstract: Minority-carrier electron-diffusion coefficients and lifetimes have been measured in heavily doped p-type GaAs using the zero-field time-of-flight (ZFTOF) technique. The materials studied included C-doped GaAs grown by molecular-beam epitaxy (MBE) using graphite as the dopant source, C-doped GaAs grown by metalorganic chemical-vapor deposition (MOCVD) using CCl4 as the dopant source, and Be-doped GaAs grown by MBE. Room-temperature photoluminescence intensity measurements were made on the structures and the results are compared with ZFTOF measurements of lifetime. The graphite-doped material (p∼1019 cm−3) exhibited diffusion lengths of less than 1000 Å. MOCVD-grown C-doped GaAs, which was optimized by adjusting the growth conditions to maximize the room-temperature photoluminescence intensity, had diffusion lengths comparable to those measured in Be-doped GaAs for hole concentrations of 1×1019 and 5×1019 cm−3. Comparison of photoluminescence intensities also suggests that addition of In to very heavily doped MOCVD-grown GaAs (p≳1020 cm−3) to eliminate the lattice mismatch with respect to the substrate does not result in an improvement in lifetime.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    URL: Article
    DOI: 10.1063/1.353991
    Language: English
    Publisher: AIP Publishing
    Publication Date: 1993
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 10
    Online Resource
    Online Resource
    Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD
    Springer Science and Business Media LLC ; 1992
    In:  Journal of Electronic Materials Vol. 21, No. 12 ( 1992-12), p. 1111-1118
    Details
    In: Journal of Electronic Materials, Springer Science and Business Media LLC, Vol. 21, No. 12 ( 1992-12), p. 1111-1118
    Type of Medium: Online Resource
    ISSN: 0361-5235 , 1543-186X
    URL: Article
    DOI: 10.1007/BF02667602
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1992
    detail.hit.zdb_id: 2032868-0
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