In:
Applied Physics Letters, AIP Publishing, Vol. 100, No. 4 ( 2012-01-23)
Abstract:
We have demonstrated single-photon emission from a nitrogen luminescence center in GaAs. An inhomogeneously broadened luminescence band formed by localized centers was observed in the spectral range from 1480 meV to 1510 meV at 5 K in nitrogen delta-doped GaAs. Optical properties of the individual centers were investigated by steady-state and time-resolved micro photoluminescence. We have found that a bright luminescence center emits single photons with a radiative lifetime of 650 ps, which is much shorter than the lifetime of NN pairs in previous reports.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2012
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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