In:
Solid State Phenomena, Trans Tech Publications, Ltd., Vol. 205-206 ( 2013-10), p. 446-450
Abstract:
The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compound is presented. It is demonstrated that the addition of appropriate dopant, gallium, in ZnON, suppresses the formation of shallow donor, nitrogen vacancies, and significantly improves electrical characteristics of the resulting TFT. The Ga:ZnON devices with field-effect mobility values exceeding 50 cm 2 /Vs are achieved, which makes them suitable as switching or driving elements in next-generation flat-panel displays.
Type of Medium:
Online Resource
ISSN:
1662-9779
DOI:
10.4028/www.scientific.net/SSP.205-206
DOI:
10.4028/www.scientific.net/SSP.205-206.446
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2013
detail.hit.zdb_id:
2051138-3
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