In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 50, No. 6S ( 2011-06-01), p. 06GG11-
Abstract:
Self-organized nanogratings were formed with a period of sub-wavelength on the surfaces of Si and GaAs wafers by scanning a femtosecond laser beam at 800 nm with appropriate irradiation conditions. The periodicity and shape of the nanogratings formed on the surfaces of two semiconductors were studied with different laser polarizations and various scan speeds. We also studied the profile and variation of the nanograting depth from the surface by atomic force microscope (AFM) analysis, and merged neighboring nanogratings to form a large area of grating structure.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.50.06GG11
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2011
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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