In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 11A ( 1993-11-01), p. L1588-
Abstract:
The depth profiles of activated boron concentration N B in the Al/p + -diamond Schottky diodes were systematically investigated from the junction capacitance-voltage ( C - V ) curves. The observed 1/ C 2 vs V plot did not fall on straight lines, indicating a nonuniform depth profile of N B . Using these C - V curves, activated boron concentration N B profiles were obtained. From the outermost surface to 50∼300-nm-deep layers (depending upon the original doping amount), N B decreased by two∼three orders of magnitude from its original value. This kind of abrupt profile developed only in regions in contact with Al.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L1588
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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