In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 8R ( 1996-08-01), p. 4203-
Abstract:
Implantation of S + ions into GaAs was performed under the conditions of energy of 120 keV and doses of 3×10 13 –1×10 15 cm -2 . The GaAs was capped with an 80 nm thick a-Si:H film into which As was doped at a concentration of 2×10 20 cm -3 . Then, the samples were annealed in Ar gas at 850–1000°C for 15 min. The As-doped a-Si:H film did not crack even after it was heated to a high temperature such as 1000°C. The sheet carrier concentrations were approximately proportional to the square root of the implantation dose. The diffusivity of S can be represented by the equation D e = D 1 [ K ' Q 2 /(1 + K ' Q 2 )] , where K ' is a constant, Q is the implantation dose, and D 1 is the diffusivity of a mobile complex.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.4203
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink