In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 33, No. 4R ( 1994-04-01), p. 1728-
Abstract:
In this study, the direct relationship between stress at edges of the local oxidation of silicon (LOCOS) structure and Fe atoms was investigated employing secondary ion mass spectroscopy (SIMS), total reflection X-ray fluorescence (TXRF), transmission electron microscopy (TEM), and optical microscopy. Fe atoms contaminated from the back of the wafer diffused to the front surface during the drive-in annealing and became trapped by the stress generated at LOCOS edges and aggregated to form some kinds of defect. TXRF analysis suggested that even the lowest stress generated at LOCOS edges in practical LSI fabrication processes must gain sufficient ability to trap Fe atoms once contamination occurs. There seemed to be a critical Fe concentration to form these defects.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.33.1728
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1994
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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