In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 12A ( 1996-12-01), p. L1589-
Abstract:
The drain-to-source current of a metal-oxide semiconductor field-effect transistor (MOSFET) was controlled by long-wavelength laser light for the first time. The device studied was composed of an absorption region and a MOSFET, and these two regions were bonded by polyimide. When the voltage was applied to the absorption region, it showed the normal operation of a MOSFET. When the laser light with a wavelength of 1.48 µm was irradiated on to the absorption region, a responsivity of more than 100 A/W was achieved. This device modulates the current of the MOSFET by changing the electric field in the absorption region, and it has the possibility of high-speed operation up to 60 GHz.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.35.L1589
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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