In:
SID Symposium Digest of Technical Papers, Wiley, Vol. 46, No. 1 ( 2015-06), p. 772-774
Abstract:
This letter demonstrates a mobility enhancing method using a multi‐active layer structure in oxide TFTs. The active layers are deposited in sequence according to their different conductivities, which can be performed with different materials or different process conditions. The multi‐active layer comprises bottom, middle, and top layers, forming a carrier‐confinement structure. The middle layer has a higher carrier concentration, while bottom and top layers have lower ones. In this way, the main channel current flows through the middle layer, and this avoidance of the gate insulator/active layer and active layer/passivation interface leads to higher mobility. In this work, the multi‐layer oxide TFTs shows better mobility of 46.5 cm2/Vs when compared to any single layer.
Type of Medium:
Online Resource
ISSN:
0097-966X
,
2168-0159
DOI:
10.1002/sdtp.2015.46.issue-1
Language:
English
Publisher:
Wiley
Publication Date:
2015
detail.hit.zdb_id:
2526337-7
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