In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 116 ( 1988)
Abstract:
Schottky barrier contacts have been made on CVD—grown β - SiC on Si substrates, and their C—V and I—V characteristics are measured. Dependence of the Schottky characteristics on Si substrate orientation ((n11),(n=1,3,4,5,6), and (100)) is examined. The Schottky diodes of the β-SiC films on Si (611), Si(411), and Si (111) show excellent characteristics compared with the conventional Schottky diodes using Si(100) substrates. That is, reverse leakage currents are small, ideality factors are close to unity, and barrier heights are larger.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-116-351
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1988
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