In:
Advanced Functional Materials, Wiley, Vol. 19, No. 3 ( 2009-02-10), p. 378-385
Abstract:
The dielectric‐semiconductor interfacial interactions critically influence the morphology and molecular ordering of the organic semiconductor molecules, and hence have a profound influence on mobility, threshold voltage, and other vital device characteristics of organic field‐effect transistors. In this study, p‐channel small molecule/polymer (evaporated pentacene and spin‐coated poly(3,3‴;‐didodecylquarterthiophene) – PQT) and n‐channel fullerene derivative ({6}‐1‐(3‐(2‐thienylethoxycarbonyl)‐propyl)‐{5}‐1‐phenyl‐[5,6]‐C61 – TEPP‐C61) show a significant enhancement in device mobilities ranging from ∼6 to ∼45 times higher for all classes of semiconductors deposited on sol–gel silica gate‐dielectric than on pristine/octyltrichlorosilane (OTS)‐treated thermally grown silica. Atomic force microscopy, synchrotron X‐ray diffraction, photoluminescence/absorption, and Raman spectroscopy studies provide comprehensive evidences that sol–gel silica dielectrics‐induced enhancement in both p‐ and n‐channel organic semiconductors is attributable to better molecular ordering/packing, and hence reduced charge trapping centers due to lesser structural defects at the dielectric‐semiconductor interface.
Type of Medium:
Online Resource
ISSN:
1616-301X
,
1616-3028
DOI:
10.1002/adfm.200800929
Language:
English
Publisher:
Wiley
Publication Date:
2009
detail.hit.zdb_id:
2029061-5
detail.hit.zdb_id:
2039420-2
SSG:
11
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