In:
physica status solidi (a), Wiley, Vol. 210, No. 2 ( 2013-02), p. 276-284
Abstract:
Titanium dioxide (TiO 2 ) thin films were deposited by remote‐plasma atomic layer deposition (RPALD). The process window was determined in the range from 150 to 300 °C for atomic layer deposition of TiO 2 thin film. The crystal structure and grain size of the TiO 2 thin films deposited by RPALD was controlled via the variations of the deposition temperature and post‐deposition thermal annealing. The as‐deposited TiO 2 thin film grown at 150 °C was amorphous whereas the TiO 2 thin films grown above 200 °C were polycrystalline, consisting of anatase phase. As the deposition temperature increased, the grain size of the anatase phase progressively decreased. Meanwhile, when annealed at 900 °C, the amorphous TiO 2 thin film deposited at 150 °C crystallized into anatase structure. The film deposited at 200 °C retained the anatase structure up to 900 °C while incurring minimal grain growth. However, the post‐annealed TiO 2 thin films deposited at 250 and 300 °C partially transformed to the rutile structure, resulting in a mixture of anatase and rutile phases. It is speculated that the relatively large grain size of the films deposited below 200 °C likely suppressed the anatase → rutile transformation during annealing as the reduction of total fraction of grains boundaries, which acted as primary nucleation sites for the rutile transition, delayed the anatase → rutile transformation.
Type of Medium:
Online Resource
ISSN:
1862-6300
,
1862-6319
DOI:
10.1002/pssa.201228671
Language:
English
Publisher:
Wiley
Publication Date:
2013
detail.hit.zdb_id:
1481091-8
detail.hit.zdb_id:
208850-2
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