In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 18, No. 6 ( 2000-11-01), p. 3349-3353
Abstract:
The replicated resist pattern characteristics caused by photoelectrons and Auger electrons generated from the W substrate were investigated for 100 nm proximity x-ray lithography. In addition, simulations for a hard x-ray spectrum having 2.36 keV average energy were performed to investigate the substrate electron effects in hard x-ray lithography. In the experiments, it was found that the secondary electrons from the W substrate caused undercut and footing of resist profiles at the resist–substrate interface. Several buffer layers with varying thicknesses were tested to reduce the photoelectron effects from the W substrate. The best thickness of the buffer layers for a good resist pattern profile was discovered to be & gt;30 nm. Furthermore, the experimental results were quantitatively compared to the results from computer simulations using the Monte Carlo method. For hard x rays, we predict that the exposure latitude is worse on both W and Si substrates.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2000
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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