In:
Dalton Transactions, Royal Society of Chemistry (RSC), Vol. 51, No. 24 ( 2022), p. 9278-9290
Abstract:
Due to its unique optical, electrical, and chemical properties, tin dioxide (SnO 2 ) thin films attract enormous attention as a potential material for gas sensors, catalysis, low-emissivity coatings for smart windows, transparent electrodes for low-cost solar cells, etc . However, the low-cost and high-throughput fabrication of SnO 2 thin films without producing corrosive or toxic by-products remains challenging. One appealing deposition technique, particularly well-adapted to films presenting nanometric thickness is atomic layer deposition (ALD). In this work, several metalorganic tin-based complexes, namely, tin( iv ) tert -butoxide, bis[bis(trimethylsilyl)amino] tin( ii ), dibutyltin diacetate, tin( ii ) acetylacetonate, tetrakis(dimethylamino) tin( iv ), and dibutyltin bis(acetylacetonate), were explored thanks to DFT calculations. Our theoretical calculations suggest that the three last precursors are very appealing for ALD of SnO 2 thin films. The potential use of these precursors for atmospheric-pressure spatial atomic layer deposition (AP-SALD) is also discussed. For the first time, we experimentally demonstrate the AP-SALD growth of SnO 2 thin films using tin( ii ) acetylacetonate (Sn(acac) 2 ) and water. We observe that Sn(acac) 2 exhibits efficient ALD activity with a relatively large ALD temperature window (140–200 °C), resulting in a growth rate of 0.85 ± 0.03 Å per cyc. XPS analyses show a single Sn 3d 5/2 characteristic peak for Sn 4+ at 486.8 ± 0.3 eV, indicating that a pure SnO 2 phase is obtained within the ALD temperature window. The as-deposited SnO 2 thin films are in all cases amorphous, and film conductivity increases with the deposition temperature. Hall effect measurements confirm the n-type nature of SnO 2 with a free electron density of about 8 × 10 19 cm −3 , electron mobility up to 11.2 cm 2 V −1 s −1 , and resistivity of 7 × 10 −3 Ω cm for samples deposited at 270 °C.
Type of Medium:
Online Resource
ISSN:
1477-9226
,
1477-9234
Language:
English
Publisher:
Royal Society of Chemistry (RSC)
Publication Date:
2022
detail.hit.zdb_id:
1472887-4
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