In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 35, No. 2S ( 1996-02-01), p. 887-
Abstract:
The influence of N 2 O oxynitridation on hot-carrier-induced degradation of surface-channel p-channel metal oxide semiconductor field effect transistors was investigated. N 2 O oxynitridation reduces electron trapping due to the high barrier height for electron injection. N 2 O oxynitridation has little effect on electron and hole energies for interface trap creation. For drain avalanche hot electron injection, the role of a nitrogen-rich region as the diffusion barrier of hydrogen species is to reduce interface trap generation by chemical reaction between hydrogen atoms and Si 3 ≡Si–H precursors at the Si/SiO 2 interface. However, interface trap generation is enhanced by the existence of nitrogen atoms near the Si/SiO 2 interface for channel hot hole injection. The enhancement of hole trapping may be due to a decrease in the compressive stress near the Si/SiO 2 interface by nitrogen incorporation.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1996
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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