In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 39, No. 5R ( 2000-05-01), p. 2714-
Abstract:
The densities and energy levels of traps in silicon pin diodes are determined using the transient capacitance method (ICTS: isothermal capacitance transient spectroscopy) as well as the transient reverse current method (DCTS: discharge current transient spectroscopy). The traps determined by ICTS are located in the i layer (i.e., the n - region) and affect the steady-state reverse current (i.e., a generation current). Conversely, the traps determined by DCTS are probably located at the surface of the substrate.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.39.2714
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2000
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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