In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 31, No. 12S ( 1992-12-01), p. 4541-
Abstract:
Locally sensitive positions against soft error in a dynamic random access memory (DRAM) have, for the first time, been investigated using a proton microprobe. Both soft-error (bit-state) mapping and secondary electron mapping images of the investigated area could locally identify sensitive positions against soft error. Two kinds of error modes in a DRAM (i.e., cell mode and bit-line mode) could be directly monitored.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.31.4541
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1992
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink