In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 12S ( 1993-12-01), p. 6122-
Abstract:
Multilevel metallization is becoming increasingly important for ultra large-scale integrated circuit (ULSI) fabrication. For this purpose, dielectric films with good filling capability are required. Plasma chemical vapor deposition (CVD) using H 2 O and tetraethoxysilane (TEOS) has been proposed for interlayer-metal dielectric gap-filling in advanced ULSI devices, because of its self-planarization characteristic. There remain problems, however, because film made using plasma CVD contains organic components which must be reduced to improve film quality. H 2 O plasma treatment after deposition has been proposed to reduce organic components, but much time is required for this procedure. To satisfy the gap-filling requirement and obtain good film quality in a reasonable amount of time, a new CVD method using NH 3 as a catalyst is proposed in this paper. NH 3 as a catalyst accelerates the elimination of ethoxy groups and reduces the organic components.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.6122
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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