In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 27, No. 5A ( 1988-05-01), p. L913-
Abstract:
Temperature dependence on the electrical properties of unintentionally-doped Zn x Hg 1- x Te bulk crystals, grown by the travelling heater method with a Te solvent, has been investigated by means of the Hall measurements at temperatures in the range 77 to 300 K. The crystals grown from x =0.02 to 0.8 at about 700°C, exhibited typically n-type conduction at 300 K. In particular, the electron Hall mobility of x =0.2 was about 10 4 cm 2 /(V ·s) at about 150 K, and from its temperature dependence a donor level was located at about 12 meV below the conduction band. The electron mobility at 300 K decreased remarkably due to alloy scattering with increasing composition x . We observed anomalous behavior in the temperature dependence of the hole mobility above x =0.33; a maximum value was reached at about 4×10 3 cm 2 /(V ·s) at 77 K.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.27.L913
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1988
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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