In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 51, No. 1S ( 2012-01-01), p. 01AJ01-
Abstract:
We have investigated the effects of light radiation during plasma nitridation on the electrical properties of an Al 2 O 3 /Ge gate stack structure using the pallet for plasma evaluation (PAPE) technique. From the capacitance–voltage characteristics, the flatband voltage shift due to fixed oxide charges significantly increases after light exposure with an energy higher than 7.5 eV. In addition, the density of trapped charges near the interface and the interface state density ( D it ) also significantly increase after light exposure with an energy over 11.3 eV. The net density of positive fixed oxide charges, the density of trapped charges near the interface, and D it can be reduced by post-metallization annealing (PMA) in N 2 ambient at 300 °C.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.51.01AJ01
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2012
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
Permalink