In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 5A ( 1993-05-01), p. L645-
Abstract:
Bulk single crystals of cubic silicon carbide up to 4 mm in length have been obtained by means of the modified sublimation method. Growth temperature and pressure were examined in order to increase the growth rate. The temperatures of seed crystal and source material and the temperature gradient were 1750°C, 2250°C and 100°C·cm -1 , respectively. The pressure was ∼10 -2 Pa. The growth rate obtained was 0.8 mm·h -1 , which is one order of magnitude larger than previously reported values. Raman spectroscopy, reflectoin high-energy electron diffraction analysis and molten KOH etching show that bulk crystals grown on 6H(0001) and 3C(111) seed crystals were 3C(111) single crystals. The crystal on the 6H(0001) showed no double positioning boundaries.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.L645
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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