In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 161 ( 1989)
Abstract:
The near bandgap photoluminescence of ZnSe epilayers grown on GaAs substrates is measured for pressures up to ∼25 kbar using a diamond anvil cell at T = 9 K. The bandgap changes with pressure, dE/dp, for pseudomorphic and nonpseudomorphic films are obtained, and are compared with results for bulk crystalline ZnSe.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-161-471
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1989
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