In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 11R ( 1995-11-01), p. 6214-
Abstract:
Film preparation was carried out by plasma-enhanced chemical vapor deposition using triethoxysilane (TES)/O 2 , TES/N 2 , and TES/Ar systems. Films deposited at 50° C showed IR bands due to silica networks and organic groups such as Si-H, Si-OEt and C=O. For the TES/O 2 system, the intensities of the signals due to organic groups decreased with an increase in substrate temperature, resulting in conventional silica spectra above 200° C. The organic groups still remained at 200° C for films prepared from TES/N 2 , and Si-H groups were observed even at 350° C. The films exhibited blue photoluminescence at room temperature. Relative intensity of the photoluminescence was related to IR absorption intensity of the Si-H groups, suggesting that O-Si-H complexes or defects induced by Si-H may be the cause of photoluminescence.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.34.6214
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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