In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 1089 ( 2023-05-26), p. 3-7
Abstract:
High-quality, low resistivity n-type (nitrogen-doped) single crystal 4H-SiC wafers are needed to grow high-quality epitaxial SiC layers used for the active blocking layers of high-voltage power devices. The resistance of the substrate constitutes a portion of the device resistance for vertical devices, and therefore the SiC substrate properties must be fully characterized. In this study we report the 4H-SiC substrate electrical properties as a function of temperature measured using van der Pauw structures to measure resistivity from 4-point measurements, and carrier concentration and mobility from Hall effect measurements. We find that the SiC substrate resistivity has a minimum around 425K for typical substrate doping levels, due to a competition between the decreasing mobility and increasing carrier concentration with increasing temperature. The measured energy levels of the N donor (hexagonal / cubic sites) are extracted for a 5.8×10 18 cm -3 N-doped substrate, and found to be 15 meV and 105 meV, respectively.
Type of Medium:
Online Resource
ISSN:
1662-9752
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2023
detail.hit.zdb_id:
2047372-2
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