In:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 37, No. 3 ( 2019-05-01)
Abstract:
Evolved gas analysis (EGA), infrared attenuated reflection (ATR), and Raman spectroscopy experiments are used to study hydrogen evolution in hydrogenated microcrystalline silicon carbide (μc-Si1−xCx:H) films prepared by plasma-enhanced chemical vapor deposition. The results are compared with microcrystalline silicon (μc-Si:H). The effused hydrogen and carbon-hydride groups (CH, CH2, and CH3) are measured up to 800 °C. Their EGA curves have a peak at 410 °C, attributed to the methyl groups incorporated in the amorphous matrix during the deposition process. Moreover, hydrogen evolution curves show narrow and sharp peaks centered at 425 and 520 °C, corresponding to hydrogen desorbing from silicon hydrides at grain boundaries. While its content is more important than hydrogen bonded to silicon in the amorphous and denser crystalline regions of μc-Si1−xCx:H, but remains lower than in the μc-Si:H film. Raman and ATR data indicate that the μc-Si1−xCx:H film is composed of small size silicon crystallites embedded in a hydrogenated amorphous silicon carbide matrix and confirmed that carbon is incorporated in the amorphous matrix as methyl groups (CH3), inducing a decrease in SiHx groups compared to the μc-Si:H film.
Type of Medium:
Online Resource
ISSN:
2166-2746
,
2166-2754
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2019
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
1475429-0
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