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  • 1
    In: Journal of Applied Physics, AIP Publishing, Vol. 87, No. 9 ( 2000-05-01), p. 4210-4215
    Abstract: Epitaxial La0.7Ca0.3MnO3 thin films on the SrTiO3(100) surface have been irradiated with 250 MeV Ag17+ ions at different nominal fluence values in the range of 5×1010–4×1011 ions/cm2, resulting in columnar defects. At low fluences these defects cause changes in material properties that are small and scale linearly with dosage. Above a threshold fluence value ∼3×1011 ions/cm2 dramatic changes are observed, including an order of magnitude increase in the resistivity and 50 K drop in the Curie temperature. Transmission electron microscopy measurements show that the changes are associated with a phase transformation of the undamaged region between the columnar defects. The transformed phase has a diffraction pattern very similar to that seen in charge-ordered La0.5Ca0.5MnO3. We propose that above a critical level of ion damage, strains caused by the presence of the columnar defects induce a charge-ordering phase transition that causes the observed dramatic changes in physical properties. We speculate that a conceptually similar surface-induced charge ordering may be responsible for the “dead layer” observed in very thin strained films, and the dramatic changes in optical properties induced by polishing, and that an impurity-induced charge ordering causes the extreme sensitivity of properties to lattice substitution.
    Type of Medium: Online Resource
    ISSN: 0021-8979 , 1089-7550
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 220641-9
    detail.hit.zdb_id: 3112-4
    detail.hit.zdb_id: 1476463-5
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  • 2
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 1991
    In:  MRS Proceedings Vol. 231 ( 1991)
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 231 ( 1991)
    Abstract: We have observed an ordered structure in Zn 0.5 Fe 0.5 Se epilayers grown on (001) InP substrates using transmission electron microscopy. The ordered structure of Zn 0.5 Fe 0.5 Se has Fe atoms occupying the (0,0,0) and (½, ½, 0) sites and Zn atoms occupying the (0, ½, ½) and (½, 0, ½) sites in the zinc-blende unit cell. Ordering is observed in both electron diffraction patterns and cross-sectional high-resolution lattice images along the 〈 100 〉 and 〈 110 〉 directions. This ordered structure consists of alternating ZnSe and FeSe monolayers along the 〈 100 〉 and 〈 110 〉 directions. Computer image simulations of the high-resolution images under various thicknesses, and defocusing conditions have been obtained and are compared with those obtained experimentally.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1991
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  • 3
    Online Resource
    Online Resource
    Institute of Electrical and Electronics Engineers (IEEE) ; 2004
    In:  IEEE Transactions on Device and Materials Reliability Vol. 4, No. 2 ( 2004-06), p. 192-197
    In: IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers (IEEE), Vol. 4, No. 2 ( 2004-06), p. 192-197
    Type of Medium: Online Resource
    ISSN: 1530-4388
    Language: English
    Publisher: Institute of Electrical and Electronics Engineers (IEEE)
    Publication Date: 2004
    detail.hit.zdb_id: 2061445-7
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  • 4
    In: British Journal of Surgery, Oxford University Press (OUP), Vol. 108, No. 11 ( 2021-11-11), p. 1274-1292
    Abstract: To support the global restart of elective surgery, data from an international prospective cohort study of 8492 patients (69 countries) was analysed using artificial intelligence (machine learning techniques) to develop a predictive score for mortality in surgical patients with SARS-CoV-2. We found that patient rather than operation factors were the best predictors and used these to create the COVIDsurg Mortality Score (https://covidsurgrisk.app). Our data demonstrates that it is safe to restart a wide range of surgical services for selected patients.
    Type of Medium: Online Resource
    ISSN: 0007-1323 , 1365-2168
    Language: English
    Publisher: Oxford University Press (OUP)
    Publication Date: 2021
    detail.hit.zdb_id: 2006309-X
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  • 5
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 1994
    In:  MRS Proceedings Vol. 340 ( 1994)
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 340 ( 1994)
    Abstract: High quality InSb epilayers were grown on GaAs substrates by metal organic chemical vapor deposition using a two-step growth procedure involving trimethal indium (TMIn) predeposition. From transmission electron microscopy studies, we found that an interdiffusion layer of thickness of 10 Å forms at the interface when the substrate is exposed to TMIn for approximately 6 secs prior to the growth of the InSb filns. Hall mobilities up to σ 52,000 cm 2 /V-s were obtained at 300 K on a 2.1-μm-thick InSb heteroepitaxial film. In contrast, samples without TMIn predeposition showed polycrystallinity of the InSb films grown on single crystalline GaAs substrates. The effect. of TMNIn predeposition is to minimize the misorientation of the grains, suppress the polycrystallinity, decrease the density of threading dislocations, and increase the electron mobilities in the films. However, we found that too much TMIn predeposition gives rise t.o an intermixing layer at the InSb/GaAs interface which deteriorates the film quality. Details of the effect of the TMIn predeposition on the microstructure of InSb/GaAs with different predeposition times (zero, 6, and 12 secs) are discussed.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1994
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  • 6
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 2000
    In:  MRS Proceedings Vol. 626 ( 2000)
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 626 ( 2000)
    Abstract: Bismuth nanowires for thermoelectric applications have been made by electrochemical deposition from an aqueous Bi solution into nanoporous mica substrates, and Anopore (Al 2 O 3 ) filters. The nanoporous substrates are created by acid etching damage tracks that are produced in the mica using heavy-ion irradiation. In this work, further improvements in the fabrication process are made by investigating the electrochemical growth at the 1-d to 2-d transition region at the nanochannel-substrate surface interface as a function of deposition time and electrochemistry. Issues related to doping of the Bi wires with Te along with the problem of electrochemical growth of contacts to the nanowires as compared to vacuum deposition of contacts will be discussed.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 2000
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  • 7
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 1998
    In:  MRS Proceedings Vol. 545 ( 1998)
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 545 ( 1998)
    Abstract: The fabrication of a thermoelectric nanocomposite material consisting of nanometer scale bismuth (Bi) wires embedded in a porous mica template host is discussed in detail. In fabricating the mica templates, a positive ion accelerator is employed to irradiate 10 μm thick mica sheets with collimated beams of 15 MeV carbon ions at fluence levels of 1.5 × 10 13 ions/cm 2 . The normally incident beam generates latent nuclear damage tracks in the direction oriented perpendicularly to the mica basal plane. Atomic Force Microscope (AFM) pictures of etched tracks verify that we have fabricated porous templates containing arrays of channels with densities up to 10 13 /cm 2 and diameters as small as 5 nanometers, thus providing pores having an aspect ratio of about 2000:1. Scanning electron micrographs of 50 nm diameter tracks show that these are parallel channels with smooth, non-tapered walls. In addition, to fabricate the wires we have developed a solution-electrodeposition process employing a PC processor-driven potentiostatic/galvanostatic system. Currently, we are electrochemically embedding 10 μm long Bi wires through the nanochannel templates. The potentiostatic electrodeposition behavior of these wires is described. Current-voltage waveforms confirm that the wires are electrically uninterrupted through the mica template. Transmission electron micrographs (TEM) show these wires are single crystals, of well-defined orientation with diameters down to 50 Å. We observe bundles of 80 Å wires with a packing density of about 10 9 /cm 2 . Energy Dispersive X-ray Spectroscopy (EDS) has corroborated the presence of Bi in the nanochannels. The observation of the bismuth crystal orientation in the porous mica template is examined.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1998
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  • 8
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 1991
    In:  MRS Proceedings Vol. 238 ( 1991)
    In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 238 ( 1991)
    Abstract: In this paper we study the lattice-mismatch induced defect structures of InAs films grown on semi-insulating InP substrates using metal organic chemical vapor deposition. The defect structure studies were carried out on films of equal total thicknesses but for different duration for nucleation of a layer of InAs deposited at low temperature on the substrate. Misfit strain is caused by the inherent lattice mismatch of approximately three percent and this is partially relieved by the generation of misfit dislocations at the film/substrate interface. Transmission electron microscopy studies show the presence of an intrinsic strain and the generation of thermal etchpits at the heteroepitaxial interface. Our studies show that there is a direct correlation between the density of dislocations generated at the film/substrate interface and the duration of nucleation of the film on the substrate. Dislocation densities at the surface of the InAs films and at the heteroepitaxial interface differed by almost two orders of magnitude. High resolution electron microscopy reveals abrupt and sharp interfaces in films with thick nucleation layers and also confirms that the lattice mismatch is partially accommodated by the generation of misfit dislocations at the film/substrate interface.
    Type of Medium: Online Resource
    ISSN: 0272-9172 , 1946-4274
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1991
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  • 9
    Online Resource
    Online Resource
    AIP Publishing ; 2000
    In:  Applied Physics Letters Vol. 77, No. 11 ( 2000-09-11), p. 1695-1697
    In: Applied Physics Letters, AIP Publishing, Vol. 77, No. 11 ( 2000-09-11), p. 1695-1697
    Abstract: A series of heteroepitaxial Ba0.6Sr0.4TiO3 were grown on 0.29(LaAlO3):0.35(Sr2TaAlO6) substrates using pulsed-laser deposition. X-ray characterization revealed compressive in-plane stresses in the thinnest films, which were relaxed in a continuous fashion with increasing thickness. A theoretical treatment of the misfit strain was in good agreement with the measured out-of-plane lattice parameter. The low-frequency dielectric constant was measured to be significantly less than the bulk value and found to decrease rapidly for films less than 100 nm. A thermodynamic model was developed to understand the reduction in dielectric constant. By observing the microstructure using plan-view and cross-section transmission electron microscopy, we identified local strain associated with a threading dislocation density on the order of 1011 cm−2 as a possible mechanism for dielectric degradation in these films.
    Type of Medium: Online Resource
    ISSN: 0003-6951 , 1077-3118
    RVK:
    Language: English
    Publisher: AIP Publishing
    Publication Date: 2000
    detail.hit.zdb_id: 211245-0
    detail.hit.zdb_id: 1469436-0
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  • 10
    Online Resource
    Online Resource
    Springer Science and Business Media LLC ; 1993
    In:  Journal of Electronic Materials Vol. 22, No. 4 ( 1993-4), p. 383-389
    In: Journal of Electronic Materials, Springer Science and Business Media LLC, Vol. 22, No. 4 ( 1993-4), p. 383-389
    Type of Medium: Online Resource
    ISSN: 0361-5235 , 1543-186X
    Language: English
    Publisher: Springer Science and Business Media LLC
    Publication Date: 1993
    detail.hit.zdb_id: 2032868-0
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