In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 3 ( 2006-05-01), p. 1644-1648
Abstract:
We present growth and characterization of Cr- and Mn-doped InN films grown by plasma-assisted molecular beam epitaxy. The films were deposited on c-plane sapphire substrates, employing GaN intermediate layers to accommodate the lattice mismatch between InN and sapphire. Preliminary studies were also made on growth of Cr-doped InN over (111) GaAs substrates. X-ray diffraction and Hall measurements were used for structural and electrical characterization of the films. The magnetic properties of these materials were measured using superconducting quantum interference device magnetometry. While InN:Mn showed signs of phase segregation and paramagnetism, InN:Cr displayed ferromagnetic properties.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2006
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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