In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 40, No. 2R ( 2001-02-01), p. 867-
Abstract:
The complex refractive index of silicon using terahertz-time domain spectroscopy (THz-TDS), with an InAs wafer under the influence of a magnetic field as emitter, has been studied. By applying a magnetic field on the InAs emitter, the detected temporal waveform broadens and the spectral weight of its Fourier spectrum shifts toward the low frequency region. Calculating the real ( n ) and imaginary (κ) parts of the complex refractive index of silicon, it is found that with the application of a magnetic field the plots of these quantities in the low frequency region (sub-terahertz region) are smoother than those without magnetic field. These features indicate that a significant enhancement of the signal-to-noise ( S / N ) ratio in the low frequency region can be obtained by applying a magnetic field on the InAs emitter.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2001
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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