In:
Advanced Functional Materials, Wiley, Vol. 28, No. 31 ( 2018-08)
Abstract:
In recent years, heterostructures formed in transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties beyond the individual components. Atomically thin TMD heterostructures, such as MoS 2 ‐WS 2 , MoS 2 ‐MoSe 2 , MoS 2 ‐WSe 2 , and WSe 2 ‐WS 2 , are synthesized so far via chemical vapor deposition (CVD) method. Engineering the morphology of domains including size and shape, however, still remains challenging. Here, a one‐step CVD strategy on the morphology engineering of MoS 2 and WS 2 domains within the monolayer MoS 2 ‐WS 2 lateral heterostructures through controlling the weight ratio of precursors, MoO 3 and WO 3 , as well as tuning the reaction temperature is reported. Not only can the size ratio in terms of area between WS 2 and MoS 2 domains be easily controlled from less than 1 to more than 20, but also the overall heterostructure size can be tuned from several to hundreds of micrometers. Intriguingly, the quantum well structure, a WS 2 stripe embedded in the MoS 2 matrix, is also observed in the as‐synthesized heterostructures, offering opportunities to study quantum confinement effects and quantum well applications. This approach paves the way for the large‐scale fabrication of MoS 2 ‐WS 2 lateral heterostructures with controllable domain morphology, and shall be readily extended to morphology engineering of other TMD heterostructures.
Type of Medium:
Online Resource
ISSN:
1616-301X
,
1616-3028
DOI:
10.1002/adfm.201801568
Language:
English
Publisher:
Wiley
Publication Date:
2018
detail.hit.zdb_id:
2029061-5
detail.hit.zdb_id:
2039420-2
SSG:
11
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