In:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 23, No. 3 ( 2005-05-01), p. 918-925
Abstract:
This article describes a process that consists of embossing a bas-relief pattern into the surface of a layer of photoresist and flood illuminating the embossed resist; this process uses the topography of the resist to generate a pattern of optical intensity inside the resist layer. Development of embossed, illuminated (λ=365–436nm) photoresist yields structures as small as 70nm. Numerical solutions of the Fresnel integral are used to calculate the pattern of intensity of light in the photoresist layer. Numeric simulation of a nondiffusion-limited development process results in theoretical structures that correlate well with the structures generated experimentally.
Type of Medium:
Online Resource
ISSN:
1071-1023
,
1520-8567
Language:
English
Publisher:
American Vacuum Society
Publication Date:
2005
detail.hit.zdb_id:
3117331-7
detail.hit.zdb_id:
3117333-0
detail.hit.zdb_id:
1475429-0
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