In:
Applied Physics Letters, AIP Publishing, Vol. 105, No. 9 ( 2014-09-01)
Abstract:
Amorphous chalcogenides usually exhibit a resistivity, which increases with age following a power law ρ ∼ tα. Existing theories link this change in amorphous state resistivity to structural relaxation. Here, the impact of fundamental glass properties on resistance drift phenomena in amorphous GexTe1−x networks is studied. Employing Raman spectroscopy, the Maxwell rigidity transition from flexible to stressed rigid is determined to occur in the compositional range 0.250 & lt; xc & lt; 0.265. Stressed rigid glasses (x & gt; 0.265) exhibit rather strong resistance drift, where the drift parameters increase steadily from α = 0.13 for amorphous GeTe to α = 0.29 for compositions near the stiffness threshold xc. On the other hand, the drift parameter in flexible glasses (x & lt; 0.25) decreases with decreasing Ge content x to values as low as α = 0.05. These findings illustrate the strong impact of the stiffness threshold on resistance drift phenomena in chalcogenides.
Type of Medium:
Online Resource
ISSN:
0003-6951
,
1077-3118
Language:
English
Publisher:
AIP Publishing
Publication Date:
2014
detail.hit.zdb_id:
211245-0
detail.hit.zdb_id:
1469436-0
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