In:
SID Symposium Digest of Technical Papers, Wiley, Vol. 41, No. 1 ( 2010-05), p. 1385-1388
Abstract:
As the oxide TFT‐oriented simulator, the subgap density of states‐ based amorphous oxide TFT simulator (DAOTS) is proposed, implemented, and demonstrated for a‐InGaZnO TFTs. It consists of the parameters having their physical meanings. Moreover, concrete techniques for parameter extraction are supplied. Most preferably, the quantitative self‐consistency with experimental data is guaranteed in DAOTS.
Type of Medium:
Online Resource
ISSN:
0097-966X
,
2168-0159
Language:
English
Publisher:
Wiley
Publication Date:
2010
detail.hit.zdb_id:
2526337-7
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