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  • 1
    Online Resource
    Online Resource
    In Situ Measurement of Resist Dissolution with a Psi‐Meter
    The Electrochemical Society ; 1984
    In:  Journal of The Electrochemical Society Vol. 131, No. 9 ( 1984-09-01), p. 2200-2201
    Details
    In: Journal of The Electrochemical Society, The Electrochemical Society, Vol. 131, No. 9 ( 1984-09-01), p. 2200-2201
    Type of Medium: Online Resource
    ISSN: 0013-4651 , 1945-7111
    URL: Article
    DOI: 10.1149/1.2116050
    RVK:
    VA 4000
    Language: Unknown
    Publisher: The Electrochemical Society
    Publication Date: 1984
    Location Call Number Limitation Availability
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  • 2
    Online Resource
    Online Resource
    Surface characterization of ion-enhanced implanted photoresist removal
    American Vacuum Society ; 2006
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 24, No. 2 ( 2006-03-01), p. 657-663
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 2 ( 2006-03-01), p. 657-663
    Abstract: We characterize the chemical constitutents of high dose implanted deep ultraviolet photoresist before and after dual-mode oxygen plasma processing, where a remote rf-plasma source is operated simultaneously with rf bias. Raman spectroscopy indicates that the organic composition of the crust comprises a mixture of sp2 graphite and sp3 diamondlike carbon structures. High dose ion implantation reduces the hydrogen content by about 50 at. % as measured by hydrogen forward scattering and explains the reduced optical emission signal intensity observed during crust removal. The crust thicknesses extracted from the secondary-ion-mass spectroscopy profile correspond well to prior scanning electron microscopy characterization [Kawaguchi et al., J. Vac. Sci. Technol. B (submitted)] and support the existence of a transitional layer between the hardened crust and the underlying photoresist. Angle-resolved x-ray photoelectron spectroscopy analysis of arsenic implanted photoresist shows that dual-mode plasma processing causes substantial oxidation deep into the bulk. This result contrasts with downstream plasma processing, which proceeds by a near-surface mechanism. In addition, surface arsenic levels increase by an order of magnitude, which suggests that ion bombardment does not significantly sputter the dopant.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.2178367
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2006
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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  • 3
    Online Resource
    Online Resource
    Surface modification and contamination characterization of ion-enhanced, implanted photoresist removal
    American Vacuum Society ; 2007
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 25, No. 2 ( 2007-03-01), p. 459-463
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 25, No. 2 ( 2007-03-01), p. 459-463
    Abstract: The authors study the dopant contamination removal effectiveness of blanket high-dose implanted photoresist wafers exposed to dual mode oxygen plasma, where a remote rf-plasma source is operated simultaneously with rf bias at low temperature. Based on total x-ray reflectance x-ray fluorescence spectrometry and secondary ion mass spectrometry analyses, sputtering effects are minimal during typical process times with most of the dopant remaining on the substrate after dual mode oxygen plasma processing. SC1-based (NH4OH:H2O2:H2O Standard Clean 1) wet clean treatments reduce dopant levels but 2×1013–4×1013at∕cm2 still remain unless the substrate is processed with hydrofluoric acid (HF) wet cleanings where the contamination level is less than 2×1011at∕cm2. Remote plasma low temperature fluorine post-treatments volatilize dopant residues but are less effective than HF wet cleanings. Dual mode forming gas (4%H2∕96%N2) plasma post-treatments are ineffective for dopant contamination removal. Low temperature dual mode oxygen plasma treatments followed by high temperature remote oxygen plasma treatments after wet cleaning have lower dopant levels than low temperature dual mode oxygen plasma processing alone. High temperature remote plasma forming gas post-treatments after dual temperature processing volatilize dopant residues. The increased dopant removal effectiveness with dry fluorine remote plasmas, HF wet cleanings, and dual temperature processing is consistent with the surface modification of the underlying silicon into an oxide from ion bombardment, which also drives dopant residues into the underlying oxide. The surface modification depth from exposure to dual mode oxygen plasma is about 49–53Å.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.2647321
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2007
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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    Online Resource
  • 4
    Online Resource
    Online Resource
    Low temperature, ion-enhanced, implanted photoresist removal
    American Vacuum Society ; 2006
    In:  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Vol. 24, No. 2 ( 2006-03-01), p. 651-656
    Details
    In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, American Vacuum Society, Vol. 24, No. 2 ( 2006-03-01), p. 651-656
    Abstract: We investigate the synergistic effects of a remote rf oxygen plasma source operated simultaneously with rf bias at low temperature and find that the photoresist removal rates substantially exceed those observed with either plasma source alone. When applied to high dose ion-implanted photoresist, optical emission curves show a transition between the hydrogen-devoid crust, where oxygen radical consumption is reduced, and the underlying bulk photoresist, where oxygen radical consumption is substantial. Differences between the reactant and product optical emission traces are indicative of complex mechanisms during the crust removal, which are likely related to crust inhomogeneities observed from scanning electron microscopy (SEM) analysis. Crust removal times are as short as 13–16 s, crust removal rates are 1–1.3μm∕min or about half the removal rate of unimplanted photoresist, and crust density estimates are similar to the density of graphite. Because photoresist removal rates are comparable to conventional high temperature downstream ashers, a single step low temperature dual-mode plasma process is able to remove both the crust and bulk photoresist in less than 40 s.
    Type of Medium: Online Resource
    ISSN: 1071-1023 , 1520-8567
    URL: Article
    DOI: 10.1116/1.2178366
    RVK:
    UA 4922
    Language: English
    Publisher: American Vacuum Society
    Publication Date: 2006
    detail.hit.zdb_id: 3117331-7
    detail.hit.zdb_id: 3117333-0
    detail.hit.zdb_id: 1475429-0
    Location Call Number Limitation Availability
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    Online Resource
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