In:
Журнал технической физики, Ioffe Institute Russian Academy of Sciences, Vol. 54, No. 7 ( 2020), p. 676-
Abstract:
We analyze the asymmetric delta-doping dependence of nonlinear electron mobility & mu; of GaAs|In x Ga 1-x As double quantum-well pseudo-morphic modulation doped field-effect transistor structure. We solve the Schrodinger and Poisson's equations self-consistently to obtain the sub-band energy levels and wave functions. We consider scatterings due to the ionized impurities (IMP), alloy disorder (AL), and interface roughness (IR) to calculate & mu; for a system having double sub-band occupancy, in which the inter-sub-band effects play an important role. Considering the doping concentrations in the barriers towards the substrate and surface sides as N d1 and N d2 , respectively, we show that variation of N d1 leads to a dip in & mu; near N d1 =N d2 , at which the resonance of the sub-band states occurs. A similar dip in & mu; as a function of N d1 is also obtained at N d1 =N d2 by keeping (N d1 +N d2 ) unchanged. By increasing the central barrier width and well width, the dip in & mu; becomes sharp. We note that even though the overall & mu; is governed by the IMP- and AL-scatterings, the dip in & mu; is mostly affected through substantial variation of the sub-band mobilities due to IR-scattering near the resonance. Our results of nonlinear electron mobility near the resonance of sub-band states can be utilized for the performance analysis of GaAs|InGaAs pseudo-morphic quantum-well field-effect transistors. Keywords: asymmetric double quantum wells, GaAs|In x Ga 1-x As structures, nonlinear electron mobility, pseudo-morphic HEMT structures, resonance of sub-band states.
Type of Medium:
Online Resource
ISSN:
0044-4642
DOI:
10.21883/FTP.2020.07.49509.8743
Language:
Russian
Publisher:
Ioffe Institute Russian Academy of Sciences
Publication Date:
2020
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