In:
Journal of Materials Research, Springer Science and Business Media LLC, Vol. 26, No. 19 ( 2011-10-14), p. 2470-2478
Abstract:
We demonstrate the fabrication of shadow mask (SM) patterned as well as nanoimprint lithography (NIL) patterned organic transistors and integrated complementary organic inverters (ICOIs). As active layers pentacene (p-type) and either PTCDI-C 13 H 27 or F 16 CuPc (n-type) were used. The SM-patterned ICOIs with a staggered bottom gate configuration, a nanocomposite dielectric and both active layer combinations (pentacene/PTCDI C 13 H 27 , pentacene/F 16 CuPc) exhibited high performance (3 V operation voltage; gain around 60; high level 3 V; low level 5 mV; noise margin 0.9 V). Flexible ICOIs with transistor channel lengths of 900 nm were successfully fabricated by NIL, using a benzocyclobutene derivative as dielectric. Because of the process inherent coplanar bottom gate configuration, F 16 CuPc was used. The ICOIs showed proper functionality (3 V operation voltage; gain around 5; high level 2.9 V; low level 25 mV). To our knowledge, this study demonstrates the first complementary submicron inverters based on fully R2R compatible imprint processes.
Type of Medium:
Online Resource
ISSN:
0884-2914
,
2044-5326
DOI:
10.1557/jmr.2011.282
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2011
detail.hit.zdb_id:
54876-5
detail.hit.zdb_id:
2015297-8
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