In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 61, No. SC ( 2022-05-01), p. SC1030-
Abstract:
With the gate-length scaling, the number of domains in FeFET is reduced to a few or a single domain. In this paper, we investigate the effect of multi-domains versus few/single-domain behavior in FeFET. The abrupt polarization switching behavior of a single-domain is obtained by modifying the Preisach model in which the difference between saturation and remnant polarization ( P s − P r ) is reduced. We show that for the same program/erase voltage, a two-times higher memory window can be achieved with single/few-domains FeFET than the multi-domain FeFET. Further, at fixed program/erase voltage, the scaling behavior shows improved variability due to increased polarization-induced vertical field with single-domain FeFET. We present an optimized device with a single-domain FeFET having a low operating voltage of ±2.4 V but with the same device performance that can be achieved for multi-domain FeFET having a higher operating voltage of ±5 V, which is highly promising for low power applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.35848/1347-4065/ac428a
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2022
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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