In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 55, No. 1S ( 2016-01-01), p. 01AA18-
Abstract:
The process controllability of inductively coupled plasma-enhanced reactive sputter deposition for the fabrication of amorphous InGaZnO x (a-IGZO) channel thin-film transistors (TFTs) was investigated. a-IGZO film deposition with the addition of H 2 gas was performed using a plasma-assisted reactive sputtering system to control the oxidation process during a-IGZO film formation by balancing the oxidation and reduction reactions. Optical emission spectroscopy measurements indicate the possibility for the oxidation reaction to be inhibited by a decrease in the density of oxygen atoms and the reduction effect of hydrogen during a-IGZO film deposition due to the addition of H 2 gas. The characteristics of TFTs fabricated using a-IGZO films deposited with a plasma-enhanced magnetron sputtering deposition system were investigated. The results indicate the possibility of expanding the process window by controlling the balance between oxidation and reduction with the addition of H 2 gas. TFTs with a-IGZO films that were deposited with the addition of H 2 gas exhibited good performance with a field-effect mobility (μ FE ) of 15.3 cm 2 V −1 s −1 and a subthreshold gate voltage swing ( S ) of 0.48 V decade −1 .
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.7567/JJAP.55.01AA18
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
2016
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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