In:
Journal of Applied Physics, AIP Publishing, Vol. 56, No. 4 ( 1984-08-15), p. 1233-1236
Abstract:
Polycrystalline silicon films with high surface smoothness, good step coverage, and a relatively large grain size of ∼0.3 μm have been prepared by low-pressure chemical vapor deposition in the amorphous state and subsequent crystallization in a furnace. The final grain size achieved does not significantly depend on the initial annealing temperature used to crystallize the layer. For heavily boron implanted films, a clear correlation between sheet resistance and average grain size is found and the resistivity is close to the single crystal value for the amorphously deposited films. In contrast, only a minor resistivity reduction relative to standard polycrystalline silicon could be achieved by amorphous deposition for arsenic implanted films.
Type of Medium:
Online Resource
ISSN:
0021-8979
,
1089-7550
Language:
English
Publisher:
AIP Publishing
Publication Date:
1984
detail.hit.zdb_id:
220641-9
detail.hit.zdb_id:
3112-4
detail.hit.zdb_id:
1476463-5
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