In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 34, No. 2S ( 1995-02-01), p. 827-
Abstract:
RF performance of a metal-oxide-semiconductor field effect transistor (MOSFET) on silicon-on-insulator (SOI) with 0.5 µm gate length and 2 µm buried oxide thickness has been numerically predicted using a 2-D device simulator to check its applicability to digital cellular telephones. The device has been found to have excellent performance for a 2 GHz high-power amplifier at a power supply of 2.8 V. The calculated cutoff frequency and maximum frequency of oscillation for the intrinsic MOSFET are 23 GHz and 65 GHz, respectively. The SOI MOSFET is a promising candidate for replacing GaAs MESFETs in 2 GHz RF applications.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1995
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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