In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 32, No. 6S ( 1993-06-01), p. 3094-
Abstract:
A new process for forming Al interconnections on amorphous insulators such as SiO 2 is proposed in this paper. Al thin films were found to agglomerate at temperatures below the melting point and to fill the grooves on a SiO 2 layer by in situ annealing in which native oxide is only minimally formed on the Al surface. In sufficiently deep grooves, single-crystal Al interconnections were successfully formed without used of Al dry etching. It has been clearly confirmed by acceleration testing that single-crystal Al interconnections formed by means of the present process have excellent endurance against electromigration compared with conventional poly-crystal interconnections.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.32.3094
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1993
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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