In:
Japanese Journal of Applied Physics, IOP Publishing, Vol. 38, No. 4S ( 1999-04-01), p. 2341-
Abstract:
The interface transition layer in ultrathin SiO 2 film is characterized by analyzing the oscillatory tunneling current. SiO 2 thin films are deposited on atomically flat Si at low temperature (300°C) by photo-induced chemical vapor deposition (photo-CVD) and their electrical characteristics are investigated. The electrical characteristics of the SiO 2 /Si diode are improved by annealing in O 2 atmosphere under ultraviolet irradiation, and the current becomes small and equivalent to that of a thermally grown oxide. Tunneling current through the ultrathin gate oxide is observed to exhibit oscillatory behavior in the Fowler-Nordheim (FN) tunneling region, which results from the interference of the incident and reflected electron waves at the SiO 2 /Si interface. It is clarified from theoretical calculation of the tunneling current that the amplitude and phase of the oscillatory current are strongly affected by the transition layer thickness. It is concluded that the interface transition layer of photo-CVD SiO 2 film is thinner than that of thermally grown SiO 2 film from analysis of the amplitude of the oscillatory profile.
Type of Medium:
Online Resource
ISSN:
0021-4922
,
1347-4065
DOI:
10.1143/JJAP.38.2341
Language:
Unknown
Publisher:
IOP Publishing
Publication Date:
1999
detail.hit.zdb_id:
218223-3
detail.hit.zdb_id:
797294-5
detail.hit.zdb_id:
2006801-3
detail.hit.zdb_id:
797295-7
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